A pseudo-two-dimensional analysis of short channel MOSFETs

A new version of a pseudo-two dimensional analysis for the drain region of short channel MOSFETs is proposed. Second order effects such as mobility degradation, velocity saturation, and short channel effects are included in the analysis and the dependence on the processing parameters is taken into c...

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Bibliographic Details
Published in:Solid-state electronics 1988, Vol.31 (2), p.269-274
Main Authors: El Banna, M., El Nokali, M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A new version of a pseudo-two dimensional analysis for the drain region of short channel MOSFETs is proposed. Second order effects such as mobility degradation, velocity saturation, and short channel effects are included in the analysis and the dependence on the processing parameters is taken into consideration. The model proposed in this paper guarantees the continuity of the output conductance and its derivative with respect to the drain voltage at the point of transition from the linear to the saturation region. The predictions of the model are confirmed by a comparison with the experimental data available in the literature.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90141-4