Properties of diffused resistors in solar-grade semicrystalline silicon

The transport properties of diffused p +-layers in n-type semicrystalline solar-grade silicon have been examined. It has been found that the grain boundary slightly increases the resistance of the majority carrier flow. A simple method is proposed to determine the average grain size, the barrier hei...

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Bibliographic Details
Published in:Solid-state electronics 1988-07, Vol.31 (7), p.1179-1185
Main Authors: El-Emawy, A., Zekry, A., El-Koosy, M., Fikry, H.
Format: Article
Language:English
Subjects:
Applied sciences
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
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Summary:The transport properties of diffused p +-layers in n-type semicrystalline solar-grade silicon have been examined. It has been found that the grain boundary slightly increases the resistance of the majority carrier flow. A simple method is proposed to determine the average grain size, the barrier height and the effective trapping density at the grain boundary. Resistors made of these diffused layers show anomalous behaviour concerning their voltage and temperature dependence. This anomaly is caused by the soft I– V characteristics of the isolation p- n junction.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90277-8