Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As

Negative differential conductivity (NDC) with a peak/valley ratio of 4.5:1 (4 K) and 2:1 (150 K) is observed in double barrier resonant tunnelling devices based on n-InP/(InGa)As. A transverse magnetic field applied in the plane of the tunnelling barriers ( J ¦ B ) significantly changes the current-...

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Bibliographic Details
Published in:Solid-state electronics 1988-03, Vol.31 (3), p.707-710
Main Authors: Leadbeater, M.L., Eaves, L., Simmonds, P.E., Toombs, G.A., Sheard, F.W., Claxton, P.A., Hill, G., Pate, M.A.
Format: Article
Language:English
Subjects:
(InGa)As/InP
magnetotunnelling
Negative differential conductivity
resonant tunnelling devices
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Summary:Negative differential conductivity (NDC) with a peak/valley ratio of 4.5:1 (4 K) and 2:1 (150 K) is observed in double barrier resonant tunnelling devices based on n-InP/(InGa)As. A transverse magnetic field applied in the plane of the tunnelling barriers ( J ¦ B ) significantly changes the current-voltage characteristics and eliminates the NDC for fields above −10 T. This behaviour is explained qualitatively in terms of the effect of the magnetic vector potential on the tunnelling electrons. The magneto-oscillations in the tunnelling current for J ‖ B are discussed in terms of a simple model of resonant tunnelling.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90372-3