AlAs and InAs mode LO phonon emission assisted tunneling in (InGa)As/(AlIn)As double barrier structures

WE present a magnetospectral analysis of the different scattering processes involved in the tunneling current of an MBE grown (InGa)As/(AlIn)As double barrier diode. At zero magnetic field, the I(V) characteristics of the sample show a replica peak. We demonstrate that this peak is associated to the...

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Bibliographic Details
Published in:Solid-state electronics 1989-12, Vol.32 (12), p.1191-1195
Main Authors: Celeste, A., Cury, L.A., Portal, J.C., Allovon, M., Maude, D.K., Eaves, L., Davies, M., Heath, M., Maldonado, M.
Format: Article
Language:English
Subjects:
(InGa)As/(AlIn)As
Magnetic quantization
Phonon emission
Resonant tunneling
Scattering processes
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Summary:WE present a magnetospectral analysis of the different scattering processes involved in the tunneling current of an MBE grown (InGa)As/(AlIn)As double barrier diode. At zero magnetic field, the I(V) characteristics of the sample show a replica peak. We demonstrate that this peak is associated to the tunneling of electrons from the emitter to the quantum well, assisted by the emission of an AlAs mode LO phonon. The presence of InAs mode LO phonon emission processes is also revealed at high magnetic fields. At a field B where the crossing between InAs and AlAs mode phonon emission processes occurs, a change in the B-dependent behavior of the peak voltage positions is observed, that we attribute to a change in the dominant process. The higher probability for InAs mode LO phonon emission processes is explained by the stronger coupling of electrons to this mode in this system, in agreement with previous results on (InGa)As/(AlIn)As single heterojunctions.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(89)90212-8