Intersubband relaxation of hot carriers in coupled quantum wells

We compare experimental results for the photoluminescence decay in coupled quantum wells with a Monte Carlo simulation of electron and hole dynamics in this structure. The results support the assumption that the measured decay is associated with intersubband relaxation of electrons with little effec...

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Bibliographic Details
Published in:Solid-state electronics 1989-12, Vol.32 (12), p.1283-1287
Main Authors: Lary, Jenifer, Goodnick, Stephen M., Lugli, Paolo, Oberli, Daniel Y., Shah, Jagdeep
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Coupled quantum wells
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Intersubband scattering
Physics
Tunneling
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Summary:We compare experimental results for the photoluminescence decay in coupled quantum wells with a Monte Carlo simulation of electron and hole dynamics in this structure. The results support the assumption that the measured decay is associated with intersubband relaxation of electrons with little effect due to the holes. Quantitative agreement is found between the measured and theoretical time constants for most fields, although the theoretical values are shorter than the corresponding experimental values close to resonance.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(89)90228-1