Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells

We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (T e...

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Bibliographic Details
Published in:Solid-state electronics 1989-12, Vol.32 (12), p.1539-1543
Main Authors: Straw, A., Vickers, A.J., Roberts, J.S.
Format: Article
Language:English
Subjects:
2DEG
acoustic phonon scattering
Condensed matter: electronic structure, electrical, magnetic, and optical properties
electron temperature
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
energy relaxation
Exact sciences and technology
heterostructure
Hot electron
Physics
polar optical phonon scattering
quantum well
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Summary:We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (T e − T l), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(89)90270-0