Capacitance-voltage dependence for isotype AlGaAs/GaAs heterointerfaces comprisong rechargeable traps

The influence of rechargeable traps at the isotype interface in AlGaAs/GaAs P + pN + double-heterostructure lasers on the apparent carrier profile is evaluated. C- V measurements at different frequencies demonstrate the effects of interface states in the range below 100 kHz sometimes resulting in lo...

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Bibliographic Details
Published in:Solid-state electronics 1990, Vol.33 (2), p.227-233
Main Authors: Beister, G., Maege, J., Bach, H.-G.
Format: Article
Language:English
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Summary:The influence of rechargeable traps at the isotype interface in AlGaAs/GaAs P + pN + double-heterostructure lasers on the apparent carrier profile is evaluated. C- V measurements at different frequencies demonstrate the effects of interface states in the range below 100 kHz sometimes resulting in local maxima in the C- V curves. An analysis is given based on a new, mostly analytical modelling approach for the equilibrium case assuming continuity of the electrical potential at the heterojunction and using the balance equation for the recharging process of the interface states. It leads also to an additional relation concerning the ratio of the capture cross sections for such traps.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(90)90161-7