Device-related material properties of heavily doped gallium arsenide

Heavy impurity doping perturbs the energy-band structure of GaAs thereby influencing both the optical and electrical properties of devices. This paper examines the effects of heavy doping on material parameters important for GaAs-based bipolar devices. A broad range of experimental work directed at...

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Bibliographic Details
Published in:Solid-state electronics 1990-06, Vol.33 (6), p.693-704
Main Authors: Lundstrom, M.S., Klausmeier-Brown, M.E., Melloch, M.R., Ahrenkiel, R.K., Keyes, B.M.
Format: Article
Language:English
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Summary:Heavy impurity doping perturbs the energy-band structure of GaAs thereby influencing both the optical and electrical properties of devices. This paper examines the effects of heavy doping on material parameters important for GaAs-based bipolar devices. A broad range of experimental work directed at characterizing the doping-dependent equilibrium np product, minority carrier mobility, and minority carrier lifetime is reviewed. To facilitate device modeling, parameteric fits to the measured results are presented when appropriate. Implications for devices are then considered, and shown to be strong. Finally, the significant uncertainties and characterization needs that remain are identified.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(90)90182-E