Interface reactions in LPE grown InGaAsP/InP ridge waveguide laser diodes during aging?

Aging experiments on ridge waveguide (RW) InGaAsP/InP laser diodes at elevated temperatures have been combined with observations of the injected carrier balance inside the laser structure. Measurements of the spontaneous emission intensity ( P) and a.c. cut-off frequency ( ƒ c ) as a function of the...

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Bibliographic Details
Published in:Solid-state electronics 1991, Vol.34 (8), p.883-888
Main Authors: Beister, G., Maege, J., Richter, G., Treptow, H.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Aging experiments on ridge waveguide (RW) InGaAsP/InP laser diodes at elevated temperatures have been combined with observations of the injected carrier balance inside the laser structure. Measurements of the spontaneous emission intensity ( P) and a.c. cut-off frequency ( ƒ c ) as a function of the injection level (current and applied voltage) indicate a minority carrier lifetime decrease after the stress tests. Additionally, the spectral analysis of P provides information on barrier leakage current enhancement. Probably the degradation of P is caused by interface reactions.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(91)90235-Q