Photoluminescence and magnetotransport of 2-D hole gases in Si/SiGe/Si heterostructures

• Published in: Solid-state electronics 1994-04, Vol.37 (4), p.957-959
• Main Authors: Apetz, R., Loo, R., Vescan, L., Hartmann, A., Zastrow, U., Leuther, A., Schäpers, T., Lüth, H.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(94)90335-2

p-Type modulation-doped Si/Si 1− x Ge x /Si strained layer double heterostructures with x ∼ 0.2 have been epitaxially grown on (100) Si substrates using low pressure chemical vapor deposition (LPCVD). The modulation doping effect has been obtained by two remote boron-doped Si layers ∼ 10 nm thick. Hole mobilities as high as 5900 cm 2/Vs have been obtained at 4.2 K comparable to the best reported values, so far. The temperature dependence of the 2-D hole concentration and mobility shows characteristic remote ion-dominated scattering. Clear quantum Hall plateaus and Shubnikov-de Haas oscillations were observed. The photoluminescence (PL) from the SiGe quantum well (QW) shows excitonic behaviour in its variation with excitation power. A general trend of increasing PL intensity with the mobility of the 2-D hole gas was observed. The high hole mobility and strong PL reflect the good interfacial quality of the LPCVD Si/SiGe/Si heterointerfaces.