A silicon-on-insulator quantum wire

Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theo...

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Bibliographic Details
Published in:Solid-state electronics 1996, Vol.39 (1), p.49-51
Main Authors: Colinge, J.P., Baie, X., Bayot, V., Grivei, E.
Format: Article
Language:English
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Summary:Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the device show reasonable agreement with the experimental characteristics.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(95)00094-A