Infrared absorption in p-type [formula omitted] quantum wells: Intersubband transition and free carrier contributions

Infrared absorption has been investigated in high quality p-type SiGe Si multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analyzed using a modified Drude model, and their relative contributions to the total absorbance have been determin...

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Bibliographic Details
Published in:Solid-state electronics 1996, Vol.40 (1), p.123-126
Main Authors: Zanier, S., Guldner, Y., Berroir, J.M., Vieren, J.P., Sagnes, I., Campidelli, Y., Badoz, P.A.
Format: Article
Language:English
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Summary:Infrared absorption has been investigated in high quality p-type SiGe Si multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analyzed using a modified Drude model, and their relative contributions to the total absorbance have been determined as a function of polarization and doping level. The absorption coefficients have been deduced for radiation electric field along the growth axis and parallel to the plane of the layers.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(95)00230-8