Determination of semiconductor surface parameters from electroreflectance studies

Periodic modulation of the potential barrier inside the reflecting surface of a semiconductor results in a synchronous modulation of the reflectance. This electroreflectance effect is strongest near the photon energies of interband-transition thresholds and has therefore been explored mainly in rela...

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Bibliographic Details
Published in:Surface science 1967-01, Vol.8 (4), p.399-416
Main Author: Seraphin, B.O.
Format: Article
Language:English
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Summary:Periodic modulation of the potential barrier inside the reflecting surface of a semiconductor results in a synchronous modulation of the reflectance. This electroreflectance effect is strongest near the photon energies of interband-transition thresholds and has therefore been explored mainly in relation to band structure analysis. Since phase, magnitude, and spectral distribution of the reflectance response depend upon the value of the surface potential around which the ac electric field modulates the potential barrier, the effect can also be used for the determination of the surface parameters by strictly optical means. Results are reported which demonstrate qualitatively how surface potential and certain features of the surface-state characteristics of a semiconductor can be determined without making electrical measurements.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(67)90047-7