Atom vibrations on clean and doped (111) silicon surface and on clean (110) GaAs surface

Mean square atomic displacements ∓ U s 2 were studied by means of LEED on the clean surfaces GaAs(110)-1 and Si(111)-7, and after adsorption of Al and Ti atoms on silicon. The effective values ∓ U s 2 have been found to be about 2.2 times larger than the bulk ones on the Si(111)-7 surface, and about...

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Bibliographic Details
Published in:Surface science 1972-01, Vol.32 (3), p.576-582
Main Authors: Nesterenko, B.A., Borodkin, A.D., Snitko, O.V.
Format: Article
Language:English
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Summary:Mean square atomic displacements ∓ U s 2 were studied by means of LEED on the clean surfaces GaAs(110)-1 and Si(111)-7, and after adsorption of Al and Ti atoms on silicon. The effective values ∓ U s 2 have been found to be about 2.2 times larger than the bulk ones on the Si(111)-7 surface, and about 1.5 times larger than on the GaAs(110)-1 surface. Ordered adsorption of Al on silicon decreases ∓ U s 2. Disordered adsorption of Ti atoms does not affect the ∓ U s 2 values. The factors changing the magnitude of ∓ U s 2 are discussed.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(72)90184-7