Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysis

The oxide growth rate for p-type Si〈100〉 crystals after HF etching in air at room temperature was measured for exposures betwen 3 min and ≈ 10 3 min after etching. The oxide thicknesses were determined with traditional Al Kα excited XPS and two nontraditional methods — especially suited for very thi...

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Bibliographic Details
Published in:Surface science 1983-01, Vol.128 (1), p.169-175
Main Authors: Mende, G., Finster, J., Flamm, D., Schulze, D.
Format: Article
Language:English
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Summary:The oxide growth rate for p-type Si〈100〉 crystals after HF etching in air at room temperature was measured for exposures betwen 3 min and ≈ 10 3 min after etching. The oxide thicknesses were determined with traditional Al Kα excited XPS and two nontraditional methods — especially suited for very thin layers: Zr Mζ excited XPS and neutron activation analysis (NAA). The oxide thicknesses (mainly SiO x with x < 2) lie between 0.1 and 0.55 nm with a logarithmic growth rate of ≈ 0.2 nm/decade.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(83)90388-6