Local structure of absorbates on semiconductor surfaces using SEXAFS: A brief summary

Surface extended X-ray absorption fine structure studies of Cl, I and Te adsorbed on Si and Ge surfaces reveal in some cases unexpected adsorption site variations and bond lengths. Iodine and chlorine occupy the atop site on both Si{;111}7 × 7 and Ge{111}2 × 8 whereas Te occupies two distinct and pr...

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Bibliographic Details
Published in:Surface science 1983-09, Vol.132 (1), p.205-211
Main Authors: Citrin, P.H., Rowe, J.E.
Format: Article
Language:English
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Summary:Surface extended X-ray absorption fine structure studies of Cl, I and Te adsorbed on Si and Ge surfaces reveal in some cases unexpected adsorption site variations and bond lengths. Iodine and chlorine occupy the atop site on both Si{;111}7 × 7 and Ge{111}2 × 8 whereas Te occupies two distinct and previously unreported bridging sites on these surfaces. The Cl site identification on Si{111}7 × 7 is consistent with previously reported UPS and theoretical work whereas on Ge{111} 2 × 8 it is not. Comparison between surface and bulk bond lengths suggests π bonding for Si surface atoms.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(83)90538-1