GaAs/(AlGa)As tunnelling devices: Hydrostatic pressure investigation and model for the J( V) characteristics

A model of GaAs/(AlGa)As tunnelling devices in reverse bias is presented. It accounts for the form of the low-temperature J( V) characteristics and the occurrence of oscillatory phonon structure. Measurements of the effect of hydrostatic pressure on the J( V) curves and of the temperature dependence...

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Bibliographic Details
Published in:Surface science 1986-08, Vol.174 (1), p.472-477
Main Authors: Taylor, D.C., Guimaraes, P.S.S., Snell, B.R., Eaves, L., Sheard, F.W., Toombs, G.A., Portal, J.C., Dmowski, L., Singer, K.E., Hill, G., Pate, M.A.
Format: Article
Language:English
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Summary:A model of GaAs/(AlGa)As tunnelling devices in reverse bias is presented. It accounts for the form of the low-temperature J( V) characteristics and the occurrence of oscillatory phonon structure. Measurements of the effect of hydrostatic pressure on the J( V) curves and of the temperature dependence of the oscillatory amplitudes are reported and are discussed in terms of the model.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(86)90455-3