Reduction of SiC surface oxides by a Ga molecular beam: LEED and electron spectroscopy studies

SiC surface composition and structure appear to be sensitive to the method of surface preparation used in ultra-high vacuum. New diffraction and electron spectroscopy results have been obtained after removal of native oxide by specimen heating in a Ga molecular beam. This process, unlike oxide remov...

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Bibliographic Details
Published in:Surface science 1986-01, Vol.165 (2), p.L45-L52
Main Authors: Kaplan, R., Parrill, T.M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:SiC surface composition and structure appear to be sensitive to the method of surface preparation used in ultra-high vacuum. New diffraction and electron spectroscopy results have been obtained after removal of native oxide by specimen heating in a Ga molecular beam. This process, unlike oxide removal by heating alone, apparently does not deplete the surface of Si. For cubic beta;-SiC, the results suggest a mosaic gross surface structure with Si oxide residing in grain boundaries. Results are also presented for the hexagonal 6H-SiC polytype.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(86)90799-5