Misfit strains in semiconductor superlattices

Structural and electronic properties are described of semiconductor superlattices built from lattice mismatched III–V compounds. Misfit strains result in a variety of remarkable situations, which are experimentally put into evidence in the two exemplary systems of GaSb-AlSb and Ga l− x In x As-GaAs....

Full description

Saved in:
Bibliographic Details
Published in:Surface science 1986-03, Vol.168 (1), p.546-552
Main Author: Voisin, Paul
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Structural and electronic properties are described of semiconductor superlattices built from lattice mismatched III–V compounds. Misfit strains result in a variety of remarkable situations, which are experimentally put into evidence in the two exemplary systems of GaSb-AlSb and Ga l− x In x As-GaAs.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(86)90884-8