Gigantic oscillations in field-effect mobilities observed in ∼ 150 nm width MOSFETs

The field-effect mobility μ FE of n-channel MOSFETs with channel widths down to 150 nm and channel lengths around 1.5 μm are investigated at 2–77 K. At low temperatures, marked oscillatory behavior in μ FE is seen up to considerably high voltages V G. These oscillations are discussed in terms of loc...

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Bibliographic Details
Published in:Surface science 1986-04, Vol.170 (1), p.28-32
Main Authors: Katayama, Yoshifumi, Igura, Yasuo, Murayama, Yoshimasa, Okazaki, Shinji, Shiraki, Yasuhiro
Format: Article
Language:English
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Summary:The field-effect mobility μ FE of n-channel MOSFETs with channel widths down to 150 nm and channel lengths around 1.5 μm are investigated at 2–77 K. At low temperatures, marked oscillatory behavior in μ FE is seen up to considerably high voltages V G. These oscillations are discussed in terms of localization in an extremely small area of the two-dimensional electron system.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(86)90933-7