Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

The difficulty in achieving the amphoteric doping of wide gap II–VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated...

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Bibliographic Details
Published in:Surface science 1990-04, Vol.228 (1), p.344-346
Main Authors: Mathine, D.L., Durbin, S.M., Gunshor, R.L., Kobayashi, M., Menke, D.R., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M., Nurmikko, A.V.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The difficulty in achieving the amphoteric doping of wide gap II–VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90324-2