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Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

We have studied the evolution of photoluminescence (PL) and photoluminescence excitation (PLE) spectra together with X-ray double diffraction of a series of MOVPE grown In 0.16Ga 0.84As/GaAs strained layer superlattices (SLS) as the number of periods increases from 5 to 20 while the composition and...

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Bibliographic Details
Published in:Surface science 1990-04, Vol.228 (1), p.347-350
Main Authors: Morris, D., Lacelle, C., Roth, A.P., Maigne, P., Brebner, J.L.
Format: Article
Language:English
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Summary:We have studied the evolution of photoluminescence (PL) and photoluminescence excitation (PLE) spectra together with X-ray double diffraction of a series of MOVPE grown In 0.16Ga 0.84As/GaAs strained layer superlattices (SLS) as the number of periods increases from 5 to 20 while the composition and the thickness of the layers remain constant (70 Ă…). The structural quality of the samples with a small number of periods is excellent whereas for those with a large number of periods the rocking curves and the photoluminescence linewidth show a non-gaussian line broadening attributed to inhomogeneous strain relaxation. In the strained superlattice several well resolved interminiband transitions are observed and can be easily fitted using the experimental structural parameters.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90325-3