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Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods
We have studied the evolution of photoluminescence (PL) and photoluminescence excitation (PLE) spectra together with X-ray double diffraction of a series of MOVPE grown In 0.16Ga 0.84As/GaAs strained layer superlattices (SLS) as the number of periods increases from 5 to 20 while the composition and...
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Published in: | Surface science 1990-04, Vol.228 (1), p.347-350 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have studied the evolution of photoluminescence (PL) and photoluminescence excitation (PLE) spectra together with X-ray double diffraction of a series of MOVPE grown In
0.16Ga
0.84As/GaAs strained layer superlattices (SLS) as the number of periods increases from 5 to 20 while the composition and the thickness of the layers remain constant (70 Ă…). The structural quality of the samples with a small number of periods is excellent whereas for those with a large number of periods the rocking curves and the photoluminescence linewidth show a non-gaussian line broadening attributed to inhomogeneous strain relaxation. In the strained superlattice several well resolved interminiband transitions are observed and can be easily fitted using the experimental structural parameters. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/0039-6028(90)90325-3 |