Theoretical calculation of the properties of two-dimensional holes in doping superlattices

Two-dimensional properties, in particular, the density-of-states masses of holes in silicon and germanium doping superlattices, are determined by using self-consistent calculations and the effective mass approximation. Physical parameters of the doping superlattice such as the doping level of the n-...

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Bibliographic Details
Published in:Surface science 1990-07, Vol.233 (3), p.381-391
Main Authors: Teo, K.H., Allegretto, W., McMullin, J.N., Schmidt-Weinmar, H.G.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Two-dimensional properties, in particular, the density-of-states masses of holes in silicon and germanium doping superlattices, are determined by using self-consistent calculations and the effective mass approximation. Physical parameters of the doping superlattice such as the doping level of the n-type layers and the thickness and doping level of the p-type layers are varied to determine their effects on the hole mass characteristics as a function of hole concentration. Very high doping levels of the p-type layers of the superlattice are used to avoid the problem of the freezing out of the hole carriers at absolute zero temperature. It is determined that the doping level of the p-type layers is the leading parameter that affects the hole mass characteristics.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90651-N