Pressure dependence of light-hole transport in strained InGaAs/GaAs

A single modulation p-doped InGaAs/GaAs quantum well, 90 Å wide, was grown by MBE. The hole effective mass, m h ∗, at the Fermi energy was measured to be 0.155 from cyclotron resonance experiments. The valence Landau level dispersion was calculated and, in contrast to unstrained quantum wells, showe...

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Bibliographic Details
Published in:Surface science 1990-04, Vol.229 (1), p.122-125
Main Authors: Lancefield, D., Batty, W., Crookes, C.G., O'Reilly, E.P., Adams, A.R., Homewood, K.P., Sundaram, G., Nicholas, R.J., Emeny, M., Whitehouse, C.R.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
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Summary:A single modulation p-doped InGaAs/GaAs quantum well, 90 Å wide, was grown by MBE. The hole effective mass, m h ∗, at the Fermi energy was measured to be 0.155 from cyclotron resonance experiments. The valence Landau level dispersion was calculated and, in contrast to unstrained quantum wells, showed an approximately linear dependence on magnetic field, in agreement with the cyclotron resonance data. Transport measurements as a function of temperature (4–300 K) and hydrostatic pressure (4–8 kbar) show for the first time that the valence subband structure of strained structures is sensitive to pressure, reflecting the low in-plane mass at the valence band maximum.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90850-8