Electronic processes in double barrier resonant tunneling structures investigated by optical spectroscopy

Photoluminescence spectroscopy is employed to demonstrate the occurrence of charge build-up, and of sequential tunneling processes, in GaAs-GaAlAs double barrier resonant tunneling structures.

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Bibliographic Details
Published in:Surface science 1990-04, Vol.229 (1), p.185-188
Main Authors: Skolnick, M.S., Higgs, A.W., Simmonds, P.E., Hayes, D.G., Smith, G.W., Hutchinson, H.J., Pitt, A.D., Whitehouse, C.R., Eaves, L., Henini, M., Hughes, O.H.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
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Description
Summary:Photoluminescence spectroscopy is employed to demonstrate the occurrence of charge build-up, and of sequential tunneling processes, in GaAs-GaAlAs double barrier resonant tunneling structures.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90866-7