The Hall effect in ballistic junctions

In narrow high-mobility conductors the predominant source of scattering is reflection of carriers off the confining potential. We demonstrate that by changing the geometry of the intersection of the Hall probes with the conductor, the Hall resistance can be quenched, negative or enhanced. More compl...

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Bibliographic Details
Published in:Surface science 1990-04, Vol.229 (1), p.298-302
Main Authors: Ford, C.J.B., Washburn, S., Büttiker, M., Knoedler, C.M., Hong, J.M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
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Summary:In narrow high-mobility conductors the predominant source of scattering is reflection of carriers off the confining potential. We demonstrate that by changing the geometry of the intersection of the Hall probes with the conductor, the Hall resistance can be quenched, negative or enhanced. More complex junction geometries can lead to one of these phenomena for one field polarity and to another for the other field polarity. At liquid helium temperatures these results can be explained by following trajectories. In the milli-Kelvin range fluctuations are superimposed. At high fields strong resonant depressions of the Hall resistance are found which may be associated with bound states in the region of the cross.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90893-D