Formation mechanism of porous silicon layers obtained by anodization of monocrystalline n-type silicon in HF solutions

A mechanism for porous silicon layer formation during n-type silicon anodization in hydrofluoric acid is proposed. The mechanism is based on the idea that silicon dissolution takes place at active impurity sites which are responsible for local electric field enhancement resulting in the breakdown of...

Full description

Saved in:
Bibliographic Details
Published in:Surface science 1992-07, Vol.274 (1), p.82-92
Main Author: Dubin, Valery M.
Format: Article
Language:English
Subjects:
Chemistry
Electrochemistry
Exact sciences and technology
General and physical chemistry
Kinetics and mechanism of reactions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A mechanism for porous silicon layer formation during n-type silicon anodization in hydrofluoric acid is proposed. The mechanism is based on the idea that silicon dissolution takes place at active impurity sites which are responsible for local electric field enhancement resulting in the breakdown of the depletion charge layer and initiation of pores. It is shown that the depletion charge layer exerts an essential influence on the process of pore channel formation. The equation for calculation of the average pore sizes and of the average distance between the pore walls in dependence on the conditions of the porous silicon layer formation is obtained. The mechanism presented explains earlier observed experimental data.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(92)90101-B