Initial stages of MgO/Si and Si/MgO interface formation

The formation of MgO/Si(111) and Si/MgO(111) interfaces was investigated by Auger-electron and photoelectron spectroscopy using synchrotron radiation. These interfaces are found to be rather abrupt. A chemically reacted buffer layer of about 1 monolayer thickness was found between bulk MgO and Si. I...

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Bibliographic Details
Published in:Surface science 1992-05, Vol.269-270, p.1060-1065
Main Authors: Shikin, A.M., Prudnikova, G.V., Adamchuk, V.K., Molodtsov, S.L., Gutiérrez, A., Vandré, D., Kaindl, G.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The formation of MgO/Si(111) and Si/MgO(111) interfaces was investigated by Auger-electron and photoelectron spectroscopy using synchrotron radiation. These interfaces are found to be rather abrupt. A chemically reacted buffer layer of about 1 monolayer thickness was found between bulk MgO and Si. It is concluded that the Mg-O or Si-Si bonds are not broken in the buffer layer, with no interdiffusion of the components.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(92)91393-P