Doubly and triply charged ion production in O +—Si surface scattering

Significant fractions of the scattered and recoil ions from single collisions of keV O + ions with near surface atoms of amorphous silicon are found to be doubly and triply charged. Definite threshold energies are found for each multicharged ion, suggesting that they are produced in close binary col...

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Bibliographic Details
Published in:Surface science 1993-08, Vol.292 (3), p.305-316
Main Authors: Hird, B., Armstrong, R.A., Gauthier, P.
Format: Article
Language:English
Subjects:
Atomic, molecular, and ion beam impact and interactions with surfaces
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Impact phenomena (including electron spectra and sputtering)
Physics
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Summary:Significant fractions of the scattered and recoil ions from single collisions of keV O + ions with near surface atoms of amorphous silicon are found to be doubly and triply charged. Definite threshold energies are found for each multicharged ion, suggesting that they are produced in close binary collisions with individual surface atoms and that inner shell vacancies are produced by molecular orbital promotion. Characteristic velocities for the decay of O +, O 2+, Si +, Si 2+, and Si 3+ in passing out through the surface are reported.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(93)90336-I