Spectroscopy of interface states of indium-Si(111)(4 × 1) and (1 × 1) R30° surfaces

• Published in: Surface science 1994-04, Vol.307, p.315-320
• Main Authors: Öfner, Helmut, Surnev, Svetlozar L., Shapira, Yoram, Netzer, Falko P.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface and interface electron states; Surface states, band structure, electron density of states
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(94)90412-X

The electronic structure of the In—Si(111)(4 × 1) and (1 × 1) R30° surfaces has been investigated by k-resolved direct and inverse UV photoemission spectroscopy. Spectral features are identified in terms of In-Si interface states, overlayer-induced image potential barrier resonances, and Si bulk states using the respective energy versus k ∥ plots; the interface states are particularly pronounced in the inverse photoemission spectra. The interface states associated with the (4 × 1) and the (1 × 1) R30° surfaces are significantly different with respect to each other and are distinguished from those at the In Si(√3 × √3) R30° reconstruction. This is taken as an indication of different local bonding geometries of In adatoms in the different ordered In—Si surfaces.