Growth mechanism of silicon carbide films on silicon substrates using C60 carbonization

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Bibliographic Details
Published in:Surface science 1995-12, Vol.344 (1-2), p.23-32
Main Authors: DONG CHEN, WORKMAN, R, SARID, D
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vacuum deposition
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ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(95)00840-3