Top edge facet development in asymmetric grooves

The low pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaAs GaInP in asymmetric grooves, patterned on (1̄11)B GaAs substrates, has been examined. One of the characteristic features of this deposition is that facets develop along the top edges where the side wall plan...

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Bibliographic Details
Published in:Surface science 1995-12, Vol.344 (3), p.L1275-L1279
Main Authors: Bastos, P.L., Bongers, M.M.G., Anders, M.J., Schermer, J.J., Giling, L.J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Epitaxy
Etching
Exact sciences and technology
Faceting
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Vapor phase epitaxy
growth from vapor phase
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Summary:The low pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaAs GaInP in asymmetric grooves, patterned on (1̄11)B GaAs substrates, has been examined. One of the characteristic features of this deposition is that facets develop along the top edges where the side wall planes meet the top surface. The origin of small facets at the top edge appears to be due to pre-growth conditions. The development of these facets were found to be related to large relative growth rate differences of the GaAs buffer layer deposition on adjacent planes with different crystallographic orientations.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(95)01009-2