Thin-film growth-mode analysis by low energy ion scattering

In this paper we will propose the usefulness of time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) for the investigation of the initial growth mechanism of thin film on the solid surface. By using this technique we can estimate not only the structure of the grown metal crystalli...

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Bibliographic Details
Published in:Surface science 1996-08, Vol.363 (1), p.161-165
Main Authors: Tanaka, Yasunori, Morishita, Hideki, Ryu, Jeong Tak, Katayama, Itsuo, Oura, Kenjiro
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth mode
Lead
Low energy ion scattering (LEIS)
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Silicon
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Summary:In this paper we will propose the usefulness of time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) for the investigation of the initial growth mechanism of thin film on the solid surface. By using this technique we can estimate not only the structure of the grown metal crystallites but also the growth mode of the metal thin film on the solid surface and the size of the grown metal crystallites in a real-time measurement.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(96)00129-X