Electron transport in a non-planar 2DEG

We investigate electron transport in a spatially varying magnetic field generated by applying a uniform field to a non-planar 2DEG grown by MBE on a substrate patterned with etched facets. When a magnetic field is applied in the plane of the substrate, the resistance measured across a facet is quant...

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Bibliographic Details
Published in:Surface science 1996-01, Vol.361, p.587-590
Main Authors: Leadbeater, M.L., Foden, C.L., Burroughes, J.H., Burke, T.M., Wang, L.L., Grimshaw, M.P., Ritchie, D.A., Pepper, M.
Format: Article
Language:English
Subjects:
Electrical transport
Electrical transport measurements
Gallium arsenide
Heterojunctions
Semiconductor-semiconductor heterostructures
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Summary:We investigate electron transport in a spatially varying magnetic field generated by applying a uniform field to a non-planar 2DEG grown by MBE on a substrate patterned with etched facets. When a magnetic field is applied in the plane of the substrate, the resistance measured across a facet is quantised. Magneto-oscillations with the same periodicity are measured between probes on the planar region adjacent to the facet, even though there is no perpendicular component of magnetic field in that region. By rotating the direction of the magnetic field, we produce a normal component of field on the facet which is of opposite sign to that on the planar regions. We observe plateaux in the resistance across the facet at values determined by the sum of the inverse filling factors.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(96)00475-X