Mechanical stresses in the heterosystem germanium- gallium arsenide

Mechanical stresses in thin germanium epitaxial layers deposited by vacuum deposition on monocrystalline gallium arsenide substrates have been examined. The stresses arising are attributed to two factors: the pseudomorphic character of the growth mechanism and the gradient of structural defects in t...

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Bibliographic Details
Published in:Thin solid films 1976-01, Vol.33 (3), p.275-280
Main Authors: Datsenko, L.I., Klimenko, A.P., Matveyeva, L.A., Prokopenko, I.V., Tkhorik, Yu.A.
Format: Article
Language:English
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Summary:Mechanical stresses in thin germanium epitaxial layers deposited by vacuum deposition on monocrystalline gallium arsenide substrates have been examined. The stresses arising are attributed to two factors: the pseudomorphic character of the growth mechanism and the gradient of structural defects in the transition layer. The experimental stress dependence has been shown to be in good agreement with the theory of the dynamic properties of dislocations.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(76)90096-1