R.f. sputtered epitaxial ZnO films on sapphire for integrated optics

A technique used to sputter optical quality single-crystal ZnO on (0001)- and (1 1 02)-oriented sapphire substrates is described. The best films were measured to have about 2 dB cm -1 attenuation for 0.6328 μm light with no post-deposition treatment of the film. The performance of epitaxially grown...

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Bibliographic Details
Published in:Thin solid films 1976-10, Vol.38 (2), p.131-141
Main Authors: Paradis, E.L., Shuskus, A.J.
Format: Article
Language:English
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Summary:A technique used to sputter optical quality single-crystal ZnO on (0001)- and (1 1 02)-oriented sapphire substrates is described. The best films were measured to have about 2 dB cm -1 attenuation for 0.6328 μm light with no post-deposition treatment of the film. The performance of epitaxially grown ZnO on (1 1 02) sapphire as a surface acoustic wave medium was evaluated and found to have a piezoelectric coupling coefficient k 2 ≈ 0.4% for waves propagated along the ZnO c axis.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(76)90220-0