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Charge carrier drift mobility in polycrystalline tetracene layers
The charge carrier drift mobility in tetracene layers was measured using the time-of-flight method. Free carriers were generated by short electron pulses. At electric fields E > 2 × 10 4V cm −1 the drift velocity of holes is constant, i.e. the drift mobility is proportional to the reciprocal elec...
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Published in: | Thin solid films 1978-01, Vol.48 (2), p.133-136 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The charge carrier drift mobility in tetracene layers was measured using the time-of-flight method. Free carriers were generated by short electron pulses. At electric fields
E > 2 × 10
4V cm
−1 the drift velocity of holes is constant,
i.e. the drift mobility is proportional to the reciprocal electric field: μ
h ∝
E
−1. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(78)90235-3 |