High resolution sputtering using a focused ion beam

A 70 kV focused Ga + beam was used to sputter patterns 100 μm long with various widths in SiO 2/Si and GaAs wafers. V-shaped sputtered profiles were obtained when the beam was confined to regions of submicrometer width and the sputtered depths exceeded several thousand ångströms. Enhanced etch rates...

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Bibliographic Details
Published in:Thin solid films 1982-01, Vol.92 (1), p.165-169
Main Authors: Kubena, R.L., Seliger, R.L., Stevens, E.H.
Format: Article
Language:English
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Summary:A 70 kV focused Ga + beam was used to sputter patterns 100 μm long with various widths in SiO 2/Si and GaAs wafers. V-shaped sputtered profiles were obtained when the beam was confined to regions of submicrometer width and the sputtered depths exceeded several thousand ångströms. Enhanced etch rates were observed when the V-shaped profiles developed. Elastic side-wall scattering of the ions is believed to “self-focus” the beam during sputtering.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(82)90199-7