Influence of substrate bias on the composition, structure and electrical properties of reactively d.c.-sputtered TiN films

TiN films were grown by reactive d.c. sputtering on negatively biased substrates. The composition of the films was measured using Rutherford backscattering analysis. No change was found in the nitrogen-to-titanium ratio as a function of the bias voltage V b. Impurity oxygen was detected at low bias...

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Bibliographic Details
Published in:Thin solid films 1982-11, Vol.97 (1), p.69-77
Main Authors: Poitevin, J.M., Lemperiere, G., Tardy, J.
Format: Article
Language:English
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Summary:TiN films were grown by reactive d.c. sputtering on negatively biased substrates. The composition of the films was measured using Rutherford backscattering analysis. No change was found in the nitrogen-to-titanium ratio as a function of the bias voltage V b. Impurity oxygen was detected at low bias voltages but eliminated for | V b | > 100 V. The structure was studied using X-ray diffraction. The influence of the substrate bias on the grain size, the lattice parameter, the deposition rate, the resistivity and the temperature coefficient of resistivity was also examined. All these parameters suffered a rapid change at about V b = −100 V.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(82)90418-7