Charge motion in silicon metal/oxide/semiconductor structures: II

It was shown earlier that there is a peak at about 260 K in the thermostimulated current spectrum of metal/oxide/semiconductor structures treated by a standard procedure. In this paper we report further results obtained by analysing the origin of this peak. Oxide etching, the introduction of NaCl co...

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Bibliographic Details
Published in:Thin solid films 1982-08, Vol.94 (2), p.143-148
Main Authors: Szabó, R., Németh-Sallay, M., Szép, I.C.
Format: Article
Language:English
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Summary:It was shown earlier that there is a peak at about 260 K in the thermostimulated current spectrum of metal/oxide/semiconductor structures treated by a standard procedure. In this paper we report further results obtained by analysing the origin of this peak. Oxide etching, the introduction of NaCl contaminant, aftergrowth of the oxide and metallization were performed in different ways. On the basis of the effect of the different preparations of the samples on the current peak investigated we suggest that charges are generated by the interaction between the oxide surface layer and water vapour and that this interaction is assisted by non-bridging oxygen. The concentration of non-bridging oxygen is larger by about an order of magnitude in the as-grown oxide surface layer than in the bulk.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(82)90506-5