Optical properties of deep centers in semi-insulating ZnSe

Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe h...

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Bibliographic Details
Published in:Thin solid films 1983-01, Vol.102 (3), p.251-258
Main Authors: Bawolek, E.J., Wessels, B.W.
Format: Article
Language:English
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Summary:Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of E c − 1.2 eV was observed over the spectral region 0.5–3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 10 16 cm 2. Trap concentrations in the range 10 16−10 17 cm −3 were measured in the as-grown material.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(83)90092-5