Thin film encapsulants for annealing GaAs and InP

Methods for protecting GaAs and InP surfaces against degradation during annealing are reviewed. Various thin film encapsulants are discussed, including SiO 2, Si 3N 4 and doped glasses. A discussion of deposition methods and thin film evaluation techniques is presented.

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Bibliographic Details
Published in:Thin solid films 1983, Vol.103 (1), p.17-26
Main Authors: Oberstar, J.D, Streetman, B.G
Format: Article
Language:English
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Summary:Methods for protecting GaAs and InP surfaces against degradation during annealing are reviewed. Various thin film encapsulants are discussed, including SiO 2, Si 3N 4 and doped glasses. A discussion of deposition methods and thin film evaluation techniques is presented.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(83)90421-2