Relations between the morphology and conductivity of thin films of tetrathiofulvalinium-tetracyanoquinodimethane

The techniques of electron and oprical microscopy were used to establish correlations between the morphology and the electrical properties of tetrathiofulvalinium-tetracyanoquinodimethane (TTFTCNQ) thin films. Glass, monocrystalline silicon and the (100) cleavage planes of LiF, KBr and NaCl were us...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 1984-01, Vol.111 (1), p.7-16
Main Authors: Vollmann, W., Berger, W., Hamann, C., Libera, L.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The techniques of electron and oprical microscopy were used to establish correlations between the morphology and the electrical properties of tetrathiofulvalinium-tetracyanoquinodimethane (TTFTCNQ) thin films. Glass, monocrystalline silicon and the (100) cleavage planes of LiF, KBr and NaCl were used as the substrates. The TTFTCNQ films are polycrystalline but are to some degree oriented depending on the substrate material. Doubly oriented areas diminishing with decreasing substrate temperature during deposition were found on KBr and NaCl. The electrical conductivity depends on the film thickness. Particularly high conductivities are measured at a thickness of about 150 nm. Above 450 nm the disordered growth of a porous film takes place with a corresponding decrease in conductivity. The thin film conductivity was found to be a nearly linear function of the predominant crystallite length.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(84)90344-4