The influence of argon addition on the deposition and properties of Si:H, Cl films prepared in a glow discharge

Thin silicon films produced in r.f. glow discharges fed with SiCl 4-H 2 mixtures are studied. The effect of argon addition to the feed is examined. Emission spectroscopy and laser interferometry were used to correlate some kinetic parameters, such as the deposition rate, with chemical, optical and s...

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Bibliographic Details
Published in:Thin solid films 1986-01, Vol.135 (2), p.245-250
Main Authors: Bruno, G., Capezzuto, P., Cicala, G., Cramarossa, F.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Thin silicon films produced in r.f. glow discharges fed with SiCl 4-H 2 mixtures are studied. The effect of argon addition to the feed is examined. Emission spectroscopy and laser interferometry were used to correlate some kinetic parameters, such as the deposition rate, with chemical, optical and structural properties of the deposited material. An overall film growth mechanism is suggested in which chemisorbed species and hydrogen atoms play an important role.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(86)90131-8