Non-destructive determination of free carrier density of epitaxial layers of GaSb by IR reflectivity measurement

IR reflectivity measurements were made on thin epitaxial GaSb layers grown on n + GaSb and semi-insulating GaAs substrates. The results were interpreted using a two-oscillator dielectric model and free carrier concentrations were determined and compared with electrical measurements.

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Bibliographic Details
Published in:Thin solid films 1987-12, Vol.155 (1), p.125-132
Main Authors: Schirar, S., Bayo, L., Melouah, A., Bougnot, J., Llinares, C., Montaner, A., Galtier, M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Description
Summary:IR reflectivity measurements were made on thin epitaxial GaSb layers grown on n + GaSb and semi-insulating GaAs substrates. The results were interpreted using a two-oscillator dielectric model and free carrier concentrations were determined and compared with electrical measurements.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(87)90458-5