The 698 meV optical band in MBE silicon

The first detailed study is reported of an optical band which has only been observed in MBE silicon. The band, with its zero-phonon line at 698 meV, is shown to occur at a “deep” centre with trigonal symmetry. Vibronic coupling with Huang-Rhys factor S = 1.9 is consistent with the uniaxial stress pe...

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Bibliographic Details
Published in:Thin solid films 1989-12, Vol.183 (1), p.273-280
Main Authors: de Mello, Norbert, Davies, Gordon, Lightowlers, E.C., Higgs, Victor, Gibbings, C.J., Tuppen, C.G.
Format: Article
Language:English
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Summary:The first detailed study is reported of an optical band which has only been observed in MBE silicon. The band, with its zero-phonon line at 698 meV, is shown to occur at a “deep” centre with trigonal symmetry. Vibronic coupling with Huang-Rhys factor S = 1.9 is consistent with the uniaxial stress perturbations. Luminescence from the centre is quenched with an activation energy of about 6 meV.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(89)90452-5