Sputtering effects in Auger depth profiles of TiN thin films

TiN coatings have gained significant technological importance because of their unique properties. Quantitative determination of their composition by Auger analysis may be impeded by sputtering effects. In this paper we study to what extent such artefacts are to be expected for TiN. Several independe...

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Bibliographic Details
Published in:Thin solid films 1989-07, Vol.174, p.143-148
Main Authors: Pamler, W., Hüttinger, M., Bensch, W.
Format: Article
Language:English
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Summary:TiN coatings have gained significant technological importance because of their unique properties. Quantitative determination of their composition by Auger analysis may be impeded by sputtering effects. In this paper we study to what extent such artefacts are to be expected for TiN. Several independent experiments show that the N:Ti atomic ratio is reduced at the surface by about 10%–20% with respect to the bulk. A similar magnitude is predicted by a linear cascade sputtering model. The observed selective removal of nitrogen depends mainly on the ion angle of incidence, whereas the composition and microstructure of the TiN films, as well as the ion energy and ion species (Ar+ or Xe+), seem to be less important.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(89)90882-1