P-type delta doping in silicon MBE

P-type delta-doped layers have been prepared for the first time in silicon molecular beam epitaxy by evaporation of elemental boron. The dopant and carrier distributions have been investigated using secondary ion mass spectrometry, transmission electron microscopy and capacitance-voltage measurement...

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Bibliographic Details
Published in:Thin solid films 1990, Vol.184 (1), p.15-19
Main Authors: Mattey, N.L., Hopkinson, M., Houghton, R.F., Dowsett, M.G., McPhail, D.S., Whall, T.E., Parker, E.H.C., Booker, G.R., Whitehurst, J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:P-type delta-doped layers have been prepared for the first time in silicon molecular beam epitaxy by evaporation of elemental boron. The dopant and carrier distributions have been investigated using secondary ion mass spectrometry, transmission electron microscopy and capacitance-voltage measurements and it is deduced that the full width at half maximum of the delta layers is about 2 nm. Hall measurements indicate complete activation at 300 K and a mobility of 30± cm 2 V −1s −1 for a sheet carrier concentration of 9±2×10 12 cm −2.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(90)90392-Q