Ultra-high vacuum metalorganic chemical vapor deposition of GaAs thin films onto Si(100) using a single-source precursor

Films of gallium arsenide were deposited under ultra-high vacuum (UHV) conditions onto a silicon (100) substrate at 400 °C using a single organometallic precursor containing both Group III and Group V elements. Characterization of the films by Auger electron spectroscopy indicates that carbon is inc...

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Bibliographic Details
Published in:Thin solid films 1991-12, Vol.205 (2), p.236-240
Main Authors: Lu, Jiong-Ping, Raj, Rishi, Wernberg, Alex
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Films of gallium arsenide were deposited under ultra-high vacuum (UHV) conditions onto a silicon (100) substrate at 400 °C using a single organometallic precursor containing both Group III and Group V elements. Characterization of the films by Auger electron spectroscopy indicates that carbon is incorporated into the film in the initial stages of film growth and that the films are arsenic-deficient.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(91)90307-J