Ion irradiation of high ohmic resistivity thin film resistors

• Published in: Thin solid films 1991-08, Vol.203 (1), p.71-76
• Main Authors: Abraizov, M.G., Abraizova, M.I., Prokyrets, G.M., Chaikovskii, I.A.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Physics
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(91)90517-2

The results are presented of the effects of ion irradiation and irradiation alternated with heat treatment on the properties of 10%Fe-4%Ni-86%Si resistive alloy thin films manufactured by flash evaporation. It is shown that structural changes which occur in the films at an irradiation temperature of 573 K are similar to those which occur under heat treatment. The extrema which are absent on the dose vs. temperature coefficient of resistance curves are found on dose vs. resistance curves. The stability of the resistance and temperature coefficient of resistance of irradiated films depends on the dose and temperature of the irradiation. Alternation of irradiation and heat treatment causes a drop in resistance under irradiation and a rise in resistance under annealing. The electrophysical properties are influenced by the mode of deposition. The present results are compared with those obtained earlier when irradiating 37%Cr-53%Si-10%Ni alloy films with ions.